DMBT5551 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for general purpose applications requiring high breakdown voltage. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo 180 v collector-emitter voltage vceo 160 v emitter-base voltage vebo 6 v collector current ic 600 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 180 - - v ic=100ma collector-emitter breakdown voltage bvceo 160 - - v ic=1ma emitter-base breakdown volatge bvebo 6 - - v ie=10ma collector cutoff current icbo - - 50 na vcb =120v emitter cutoff current iebo - - 50 na veb =4v collector-emitter saturation voltage (1) vce(sat)1 - - 0.15 v ic=10ma, ib=1ma vce(sat)2 - - 0.2 v ic=50ma, ib=5ma base-emitter saturation voltage (1) vbe(sat)1 - - 1 v ic=10ma, ib=1ma vbe(sat)2 - - 1 v ic=50ma, ib=5ma hfe1 80 - - - ic=1ma, vce=5v dc current gain(1) hfe2 80 - 250 - ic=10ma, vce=5v hfe3 30 - - - ic=50ma, vce=5v transition frequency ft 100 - 300 mhz ic=10ma, vce =10v, f=100mhz output capacitance cob - - 6 pf vcb =10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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